Electro-optical apparatus and electronic equipment

ABSTRACT

A pixel electrode and a thin film transistor connected to the electrode are provided above one substrate. A shading film is provided above another substrate. The shading film has an overhanging portion defining a corner cutting in an opening area of each pixel in the crossing area where the data line and the scan line cross with each other. A channel region of the thin film transistor is arranged in the crossing areas. Thus, light resistance is enhanced and a high-grade image is displayed in an electro-optical apparatus.

BACKGROUND OF THE INVENTION

1. Field of Invention

The present invention relates to an active-matrix driving type ofelectro-optical apparatus and electronic equipment. More particularly,the invention relates to an electro-optical apparatus where a thin filmtransistor to provide pixel switching (hereinafter “TFT”) is provided ina stacked structure on a substrate. The invention further relates toelectronic equipment including the electro-optical apparatus, such as aprojector.

2. Description of Related Art

In an electro-optical apparatus, such as a TFT active-matrix drivingtype of liquid crystal apparatus and EL (Electro-luminescence) displayapparatus, when an incident light is irradiated on a channel region ofthe TFT to switch the pixel provided in each pixel, a photo-inducedleakage current is generated by light excitation and a characteristic ofthe TFT is changed thereby. Particularly, in case of an electro-opticalapparatus for a light valve of the projector, since the intensity of theincident light is strong, it is important to shade the incident lightfor the channel region of the TFT and its adjacent region.

Therefore, in the related art, in each pixel provided on a countersubstrate, such a channel region and its adjacent region are configuredto be shaded by a shading film defining an opening area where the lightcontributing to display transmits or reflects, or a data line whichpasses above the TFT and comprises a metal film, such as Al (aluminum).Further, in some cases, a shading film including, for example, ahigh-melting-point metal may be provided also on an underside of the TFTto switch the pixel on a TFT array substrate. When the shading film isalso provided on the underside of the TFT in this way, it can beprevented that a back reflection light from the TFT array substrateside, or a return light, such as a projection light coming through aprism from other electro-optical apparatus when plural number ofelectro-optical apparatus are combined with each other through prisms toform an optical system, is injected to the TFT of that electro-opticalapparatus.

SUMMARY OF THE INVENTION

However, the above various shading techniques are subject to thefollowing problems.

That is, first, according to the technique of forming the shading filmon the counter substrate or TFT array substrate, the shading film isconsiderably separated from the channel region via, for example, aliquid crystal layer, electrode, and interlayer isolation film as viewedin a three-dimensional way, and thus shading against the light injectedat oblique angle between the both is insufficient. Particularly, in asmall electro-optical apparatus for use as the light valve of theprojector, the incident light is a luminous flux formed by converginglight from a source by a lens, and contains an optic element injected atoblique angle significantly. For example, in some cases, an opticelement inclined 10 to 15 degrees from a direction vertical to thesubstrate may be contained about 10% in the incident light, thereforesuch insufficient shading against the incident light injected at obliqueangle is a practical problem.

In addition, in some cases, light entered from a region without theshading film into the electro-optical apparatus is reflected on thesubstrate or a top of the shading film and the data line formed on thesubstrate, and then such reflection light or a multiple reflectionlight, caused by further reflection of the light on the substrate or onthe shading film or data line, eventually may reach the channel regionof the TFT.

Particularly, in an attempt to achieve a higher definition or a finerpixel pitch in the electro-optical apparatus in order to enhance adisplay image grade, and in an attempt to increase an intensity of theincident light in order to achieve a brighter image display, the relatedart, various shading techniques encounter more difficulty in providingthe sufficient shading, and a problem occurs that the change of thecharacteristic of the transistor of the TFT causes flicker and leads tolowering of the display image grade.

To enhance the light resistance, although it is simply considered to beenough to broaden the area to form the shading film, in this case, it isessentially difficult to increase an open area ratio of each pixel.Therefore a problem occurs that the display image becomes dark.

The invention addresses or solves the above and/or other problems, andprovides an electro-optical apparatus including an excellent lightresistance and capability of displaying a bright, high-grade image, andan electronic equipment including the electro-optical apparatus.

To address or solve the above, the electro-optical apparatus of theinvention includes an electro-optical material sandwiched between a pairof a first and second substrates, a pixel electrode, a thin filmtransistor to switch and control the pixel electrode, a data line tosupply an image signal to the thin film transistor, and a scan linewhich supplies a scan signal to the thin film transistor and crosseswith the data line, above the first substrate, and having a firstshading film covering at least a channel region of a semiconductor layerforming the thin film transistor from upside, above the secondsubstrate. The first shading film has an overhanging portion overhangingsuch that the portion defines a corner cutting in an opening area ofeach pixel corresponding to the pixel electrode in a crossing area wherethe data line and scan line cross with each other as viewed in atwo-dimensional way, and the channel region is arranged within thecrossing area.

According to the electro-optical apparatus of the invention, duringoperation, for example, the image signal is supplied to a source of thethin film transistor through the data line, and the scan signal issupplied to a gate of the thin film transistor through the scan line.Then, for example, by switching and controlling the pixel electrodeconnected to a drain of the thin film transistor using the thin filmtransistor, the active-matrix driving type of driving can be achieved.Above the second substrate, for example, a counter electrode, oppositelyarranged with the pixel electrode, is provided, and the voltage isapplied between the counter electrode and the pixel electrode.Alternatively, in a case of the lateral electric-field driving method,the counter electrode is unnecessary, and the voltage is applied betweenthe pixel electrodes adjacent with each other.

Since at least the channel region of the semiconductor layer forming thethin film transistor and its adjacent region are covered by the firstshading film formed above the second substrate from the upside, anincident light from the upside with respect to a substrate surface canbe essentially prevented from injecting to the channel region of thethin film transistor and its adjacent region.

Particularly, the first shading film has the overhanging portionoverhanging such that the pattern defines the corner cutting in theopening area of each pixel in the crossing area where the data line andscan line cross with each other. For example, when a quadrilateralopening area is considered as a standard, 1 to 4 of the corner cuttingsare provided, and the opening areas in a pentagon to octagon shape aredefined. The channel region is arranged within the crossing area havingsuch corner cutting. Therefore, compared to a case without theoverhanging portion, by using the first shading film having theoverhanging portion, a strong incident-light which advances verticallyor obliquely from the upside with respect to the substrate surface, andan internal reflection light and multiple reflection light based on theincident light, can be effectively reduced or prevented from injectingto the channel region of the thin film transistor and its adjacentregion.

As a result, the unevenness of display or flicker caused by thelight-induced leakage current or variation in the thin film transistorcan be efficiently reduced with the open area ratio of each pixel beingincreased, and eventually a bright high-grade image can be displayed.

In another exemplary embodiment of the electro-optical apparatus of theinvention, the channel region is arranged in the center of the crossingarea.

In this exemplary embodiment, the channel region is arranged in thecenter of the crossing area, and particularly, separated from theopening area of each pixel through which light passes with some distancebecause of the presence of corner cutting. Therefore, a shadingperformance for the channel region can be efficiently enhanced. Themeaning of the phrase “arranged in the center of the crossing area”includes a case that the channel region locates near to the center pointin a greater or smaller extent from the border of the crossing areawithin the area, in addition to the case that a center point of thechannel region corresponds with the center point of the crossing area,such as a centroid.

In another exemplary embodiment of the electro-optical apparatus of theinvention, a micro-lens arranged oppositely to the pixel electrode isfurther provided above the second substrate, and the first shading filmis formed in a region opposed to the crossing area.

According to the exemplary embodiment, the incident light is introducednear to the center of the opening area of each pixel through themicro-lens. Here, particularly, the incident light, injected to fourcorners near to a boundary of the micro-lens aligned in an arraypattern, is hardly converged appropriately or cannot be convergedappropriately because of the property of the lens. However, since theoverhanging portion can shade the optic element that is not convergedappropriately by the micro-lens, enhancement of the image quality can beexpected with the brightness being maintained.

In another exemplary embodiment of the electro-optical apparatus of theinvention, the first shading film is formed individually in the crossingarea in an island pattern.

According to the exemplary embodiment, the first shading film that isformed in the crossing area in the island pattern and has theoverhanging portion can exclusively shade the channel region and itsadjacent region. Particularly, according to such island patternconfiguration, a total area of the shading film formed above the secondsubstrate can be reduced, therefore it is effectively prevented that theopening area of each pixel is reduced by a misalignment in bonding thefirst and second substrates together during fabrication. Also,generation of stress caused by the first shading film in the secondsubstrate can be reduced by forming the film in the island pattern.

Alternatively, in another exemplary embodiment of the electro-opticalapparatus of the invention, the first shading film is formed in astriped pattern area extending along the scan line or the data lineincluding the crossing area.

According to the exemplary embodiment, the first shading film, which isformed in the stripe pattern area including the crossing area and hasthe overhanging portion, enhances the shading performance for thechannel region and its adjacent region locally. Moreover, the entirestripe-pattern area along the scan line or data line can be also shaded,and the first shading film can also define the area along the scan lineor data line within the unopened array-pattern area of each pixel.

Alternatively, in another exemplary embodiment of the electro-opticalapparatus of the invention, the first shading film is formed in an arraypattern area extending along the scan line and the data line includingthe crossing area.

According to the exemplary embodiment, the first shading film, which isformed in the array-pattern area including the crossing region and hasthe overhanging portion, improves the shading performance for thechannel region and its adjacent region locally. Moreover, the entirearray-pattern area along the scan line and data line can be also shaded,and the first shading film can also define all of the unopened area ofeach pixel.

In another exemplary embodiment of the electro-optical apparatus of theinvention, an upside shading film covering at least the channel regionfrom the upside is further provided above the first substrate.

According to the exemplary embodiment, by the first shading film andupside shading film, the incident light from the upside with respect tothe substrate surface, the internal reflection light or multiplereflection light arising from the incident light, can be prevented moresecurely from injecting to at least the channel region of the thin filmtransistor. Also, the unopened area of each pixel can be defined by thefirst shading film only, or by both of the first and upside shadingfilms.

The upside shading film may be combined with a capacitor electrode of afixed potential side to form a storage capacitor connected to the pixelelectrode, or a capacitance line including the capacitor electrode atthe fixed potential side. Alternatively, it may be combined with acapacitor electrode of a pixel potential side of the storage capacitor.Also, both of the capacitor electrode at the fixed potential side andthe capacitor electrode at the pixel potential side can be formed from aconductive shading film.

In the exemplary embodiment, the upside shading film may have theoverhanging portion overhanging such that the portion defines the cornercutting in the crossing area.

According to the configuration, the channel region and its adjacentregion can be shaded doubly at a position, separated from the openingarea of each pixel through which light passes, by the overhangingportion of the upside shading film, in addition to the overhangingportion of the first shading film, therefore the shading performance forthe regions can be further enhanced.

Alternatively, in the exemplary embodiment according to the upsideshading film, a two-dimensional pattern of the first shading film may beconfigured, such that the pattern covers a two-dimensional pattern ofthe upside shading film in the crossing area.

According to the configuration, it is efficiently prevented that anincident light having a stronger intensity than the normal return lightpasses through the side of the first shading film and reflects on a topof the upside shading film to generate the internal reflection light orthis can be reduced. Also, the first shading film formed at the secondsubstrate side can define part or all of the unopened area of eachpixel. Even if the misalignment occurs in bonding the first and secondsubstrates together during fabrication, reduction of the opening areacan be effectively blocked by the presence of the upside shading film.

Alternatively, in the exemplary embodiment according to the upsideshading film, the two-dimensional pattern of the first shading film maybe configured, such that the pattern is formed smaller than thetwo-dimensional pattern of the upside shading film in the crossing area.

According to the configuration, the upside shading film can define apart or all of the unopened area of each pixel above the firstsubstrate. Even if the misalignment occurs in bonding the first andsecond substrates together during fabrication, the reduction of theopening area can be effectively blocked by the presence of the firstshading film. In this case, the first shading film functions mainly toshade the channel region and its adjacent region, and particularlyfunctions for reducing the heat generated within that electro-opticalapparatus by shading only at the first substrate side.

In another exemplary embodiment of the electro-optical apparatus of theinvention, a downside shading film covering the channel region and itsadjacent region from a downside is further provided above the firstsubstrate.

According to the exemplary embodiment, the channel region of thesemiconductor layer forming the thin film transistor and its adjacentregion are covered from the downside by the downside shading film,therefore, a return light from the downside with respect to thesubstrate surface, an internal reflection light or multiple reflectionlight based on the return light, can be reduced or essentially preventedfrom injecting to the channel region of the thin film transistor and itsadjacent region. Here, the word “return light” is a light that is anoncontributing to display which returns in a direction opposite to theincident light, such as back reflection on the substrate, or a lightwhich is emitted from another light valve in a multiple-plate projectorusing plural number of those electro-optical apparatus as light valves,and passes through a composite optical system.

In addition, the downside shading film makes it possible to define apart or all of the unopened area of each pixel above the firstsubstrate.

In the exemplary embodiment, the downside shading film may have theoverhanging portion overhanging such that the portion defines the cornercutting in the crossing area.

According to the configuration, compared to a case without theoverhanging portion in that downside shading film, by the downsideshading film having the overhanging portion, a return light whichadvances from the downside vertically or obliquely with respect to thesubstrate surface, an internal reflection light and multiple reflectionlight arising from the return light, can be effectively reduced orprevented from injecting to the channel region of the thin filmtransistor and its adjacent region.

In the exemplary embodiment according to the downside shading film, atwo-dimensional pattern of the downside shading film may be configuredsuch that the pattern is somewhat smaller in the crossing area than thetwo-dimensional pattern of the upside shading film.

According to the configuration, it is reduced or efficiently preventedthat the incident light having a stronger intensity than the normalreturn light passes through the side of the upside shading film andreflects on a top of the downside shading film to generate the internalreflection light.

However, in the exemplary embodiment according to the downside shadingfilm, the two-dimensional pattern of the downside shading film may beconfigured, such that the pattern is somewhat larger in the crossingarea than the two-dimensional pattern of the upside shading film. Also,in the exemplary embodiment according to the downside shading film, thetwo-dimensional pattern of the downside shading film may be configured,such that the pattern is somewhat smaller or larger in the crossing areathan the two-dimensional pattern of the first shading film.

In another exemplary embodiment of the electro-optical apparatus of theinvention, among the four corners of the opening area, the overhangingportion is provided in at least one or plural number of corners wheremalfunction of the electro-optical material is comparatively serious.

According to the exemplary embodiment, the corner cutting is defined fora corner having the serious malfunction of the electro-optical materiallayer, such as a bad orientation of the liquid crystal layer. Therefore,in a case that the malfunction does not occur evenly in the fourcorners, such as a case that the bad orientation of the liquid crystallayer does not occur evenly in the four corners in relation to rubbingdirection, that malfunctioned area is masked positively. Accordingly, acontrast ratio is efficiently enhanced by preventing a light escape inthe corner of each opening area. At the same time, since a normal orsubstantially normal operation is performed in a corner in which themalfunction is not serious, the corner is not masked and used as part ofthe opening area, thereby reduction of the open area ratio of each pixeldue to the presence of the overhanging portion can be restrained.

The overhanging portion may be provided one, two, or three for oneopening area depending on an occurrence site or degree of themalfunction.

Alternatively, in another exemplary embodiment of the electro-opticalapparatus of the invention, the overhanging portions, each of them beingsymmetric vertically and horizontally, are provided in the four cornersof the opening area respectively.

According to the exemplary embodiment, the overhanging portions, each ofthem being symmetric vertically and horizontally, are provided in thefour corners of the opening area respectively, and a two-dimensionalpattern of the opening area of each pixel is close to a circle orpolygon shape compared with that in a case without the overhangingportion. As a result, the opening area having the two-dimensionalpattern close to the circle or polygon shape can be used to display anexcellent image having a reduced light-escape region or malfunctionedregion in each opening area. Particularly, when the configuration isemployed in case that a micro-lens having a circular or substantiallycircular pattern is used, the configuration is very effective because anappropriately converged incident light can be passed through the openingarea, and an inappropriately converged incident light can be shaded.

The electro-optical apparatus of the invention has the electro-opticalmaterial sandwiched between a pair of the first and second substrates,the pixel electrode, thin film transistor to switch and control thepixel electrode, data line to supply the image signal to the thin filmtransistor, and scan line which supplies the scan signal to the thinfilm transistor and crosses with the data line above the firstsubstrate, and has the first shading film covering at least the channelregion of the semiconductor layer forming the thin film transistor fromthe upside above the second substrate, and the first shading film hasthe shading area to shade the corner of the pixel electrode in thecrossing area where the data line and the scan line cross with eachother as viewed in a two-dimensional way, and the channel region ispreferably arranged within the crossing area.

The electro-optical apparatus of the invention may be constructed, forexample, as the liquid crystal apparatus, or the EL (electroluminescence) display apparatus.

To address or solve the above, the electronic equipment of the inventionincludes the electro-optical apparatus of the invention. (various otherexemplary embodiments are also included.)

Since the electronic equipment of the invention includes theelectro-optical apparatus of the invention, it can realize variouselectronic equipment which can display a bright high-grade image, suchas a projection display apparatus, a liquid crystal television, acellular phone, a personal digital assistance, a word processor, aviewfinder type or a monitor direct-viewing type of video tape recorder,a workstation, a TV telephone, a POS terminal, and a touch screen, forexample.

These effects and other advantages of the invention will be shown fromthe exemplary embodiments described in the following.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic of various elements and interconnections providedon plural number of matrix pattern pixels forming an image display areain the electro-optical apparatus of an exemplary embodiment of theinvention;

FIG. 2 is a plan view of a plural number of pixels adjacent to eachother on a TFT array substrate above which a data line, scan line, andpixel electrode are formed in the electro-optical apparatus of theexemplary embodiment of the invention;

FIG. 3 is a cross-sectional view taken along plane A-A′ of FIG. 2;

FIG. 4 is a partial plan view showing a two-dimensional-pattern of ashading film at a counter substrate side in the exemplary embodiment;

FIG. 5 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 6 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 7 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 8 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 9 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 10 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 11 is a partial plan view showing a modified exemplary embodimentaccording to the two-dimensional pattern of the shading film at thecounter substrate side, and usable in the exemplary embodiment;

FIG. 12 is a schematic cross-sectional view showing a relationshipbetween a passage of an incident light and various shading filmsaccording to the exemplary embodiment of FIG. 4 and modified exemplaryembodiments from FIG. 5 to FIG. 7;

FIG. 13 is a schematic cross-sectional view showing a relationshipbetween a passage of an incident light and various shading filmsaccording to the modified exemplary embodiments from FIG. 8 to FIG. 11;

FIG. 14(a) is a partially enlarged plan view showing a micro-lensincorporated in a counter substrate 20, and FIG. 14(b) is across-sectional view taken along plane E-E′ of FIG. 14(a);

FIG. 15(a) is a partially enlarged plan view showing a relationshipbetween the micro-lens of FIGS. 14(a) and 14(b) and the shading film atthe counter substrate side, and FIG. 15(b) is a cross-sectional viewtaken along plane E-E′ of FIG. 15(a);

FIG. 16 is a plan view of TFT array substrate in the electro-opticalapparatus of the exemplary embodiment together with respectivecomponents formed thereon, as viewed from the counter substrate side;

FIG. 17 is a cross-sectional view taken along plane H-H′ of FIG. 16; and

FIG. 18 is a schematic cross-sectional view showing a color liquidcrystal projector as an example of an exemplary embodiment of theelectronic equipment of the invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Hereinafter, exemplary embodiments of the invention are describedaccording to drawings. The following exemplary embodiments are exemplaryembodiments in which the electro-optical apparatus of the invention isapplied to the liquid crystal apparatus.

(Configuration of the pixel portion of the electro-optical apparatus)

First, a configuration of the pixel portion of the electro-opticalapparatus of the embodiment of the invention is described with referenceto FIG. 1 to FIG. 4. FIG. 1 is a schematic of various elements andinterconnections in a plural number of pixels formed in a matrix patternforming an image display area of the electro-optical apparatus. FIG. 2is a plan view of plural number of pixels adjacent to each other on aTFT array substrate above which a data line, a scan line, and a pixelelectrode are formed. FIG. 3 is a cross-sectional view taken along planeA-A′ of FIG. 2. FIG. 4 is a partial plan view showing a two-dimensionalpattern of a shading film above a counter substrate in the exemplaryembodiment. In FIG. 3, a scale is different for each layer or eachmember in order to show the layer or member in a recognizable size inthe figure.

In FIG. 1, a pixel electrode 9 a and TFT 30 to switch and control thepixel electrode 9 a are formed in each of plural number of pixels formedin the matrix pattern, which forms an image display area of theelectro-optical apparatus in the exemplary embodiment, and a data line 6a to supply an image signal is electrically connected to a source of theTFT 30. Image signals S1 to Sn written in data lines 6 a may be suppliedin this order in a line sequence mode, or may be supplied by a group fora plural number of data lines 6 a adjacent with each other. A scan line3 a is electrically connected to a gate of the TFT 30, and pulsed scansignals G1 to Gm are configured to be applied in this order in a linesequence mode to the scan lines 3 a at a predetermined timing. The pixelelectrode 9 a is electrically connected to a drain of the TFT 30, andwrites the image signals S1 to Sn supplied from the data lines 6 a at apredetermined-timing by closing a switch of the TFT 30, which is aswitching element, for only in a fixed period. The image signals S1 toSn having a predetermined level and written in the liquid crystal as anexample of the electro-optical material through the pixel electrode 9 aare held in a fixed period between the liquid crystal and a counterelectrode (described below) formed above a counter substrate (describedbelow). The liquid crystal changes orientation or order of the molecularassociation according to an applied voltage level, thereby modulateslight and enables a gray scale. In the normally white mode, atransmittance for an incident light is decreased according to a voltageapplied to each pixel as a unit, and in the normally black mode, thetransmittance for the incident light is increased according to thevoltage applied to each pixel as a unit, and light having a contrastaccording to the image signals is emitted from the electro-opticalapparatus as a whole. To reduce or prevent leakage of the held imagesignals, a storage capacitor 70 is added parallel to a liquid crystalcapacitor formed between the pixel electrode 9 a and counter electrode.The storage capacitor 70 is formed between the drain region of the TFT30 and capacitor line 300.

In FIG. 2, above the TFT array substrate of the electro-opticalapparatus, a plural number of transparent pixel electrodes 9 a (aprofile of the electrode being indicated by dot line 9 a′) are providedin a matrix pattern, and the data line 6 a and scan line 3 a areprovided along the longitudinal and lateral boundaries of the pixelelectrode 9 a, respectively.

The scan line 3 a is arranged such that the scan line 3 a is opposed toa channel region 1 a′ shown by a thin oblique line (directed to theupper right) area in the figure in a semiconductor layer 1 a, and thescan line 3 a functions as a gate electrode. Particularly in thisexemplary embodiment, the scan line 3 a is formed wide in a portionwhere it acts as the gate electrode. In this way, the TFT 30 forswitching the pixel, in which the scan line 3 a is arranged oppositelyto the channel region 1 a′ as the gate electrode, is provided at eachpoint where the scan line 3 a crosses with the data line 6 a.

As shown in FIG. 2 and FIG. 3, a capacitor line 300 is formed above thescan line 3 a. The capacitor line 300 includes a main line portionextending in a stripe pattern along the scan line 3 a in atwo-dimensional view, and a projecting portion projecting verticallyalong the data line 6 a in FIG. 2 from the main line portion at anintersection of the scan line 3 a and data line 6 a. The scan line 3 amay be formed linearly without including the projecting portion.

The capacitor line 300, including a conductive shading film containing,for example, a metal or alloy, forms an example of the upside shadingfilm, and in addition, functions as the capacitor electrode of the fixedpotential side. The capacitor line 300 comprises a metal, alloy, metalsilicide, polysilicide, and a stack of them, including at least one ofhigh-melting point metals such as Ti (titanium), Cr (chromium), W(tungsten), Ta (tantalum), and Mo (molybdenum). The capacitor line 300may contain any other metal, such as Al (aluminum), Ag (silver), Au(gold), or Cu (copper). Alternatively, the capacitor line 300 may have amultilayer structure, in which a first film including, for example, aconductive polysilicon film, and a second film comprising a metalsilicide film containing a high-melting point metal are stacked.

On the other hand, a relay layer 71, which is arranged oppositely to thecapacitor line 300 via a dielectric film 75, functions as the capacitorelectrode of the pixel potential side of the storage capacitor 70, andin addition, functions as an intermediate conductive layer relaying andconnecting between the pixel electrode 9 a and a high-density drainregion 1 e of the TFT 30.

In this way, in the exemplary embodiment, the storage capacitor 70 isformed by arranging the relay layer 71 as the capacitor electrode of thepixel potential side connected to the high-density drain region 1 e ofthe TFT 30 and the pixel electrode 9 a, and the part of the capacitorline 300 as the capacitor electrode of the fixed potential side,oppositely to each other via the dielectric film 75.

Respective data lines 6 a extending vertically in FIG. 2 and respectivecapacitor lines 300 extending horizontally in FIG. 2 are formedcrosswise to each other, thereby an upside shading film in an arraypattern in a two-dimensional view is formed on an upside of the TFT 30above a TFT array substrate 10, and approximately defines an openingarea of each pixel.

On the other hand, on a downside of the TFT 30 above the TFT arraysubstrate 10, a downside shading film 1I a is provided in an arraypattern. The downside shading film 11 a is formed by any of variousmetal films like the capacitor line 300.

Particularly in this exemplary embodiment, the capacitor line 300 has anoverhanging portion 401 defining a corner cutting in the opening area ofeach pixel, in the crossing area where the scan line 3 a and data line 6a crosses with each other within the array-pattern shading area. Therelay layer 71 has an overhanging portion 402 such that the layer alsoforms a capacitor by opposing to the overhanging portion 401 definingthe corner cutting. Also, the downside shading film 11 a has anoverhanging portion 411 defining the corner cutting in the opening areaof each pixel in the crossing area. Configurations, effects, andadvantages according to the overhanging portions 401, 402, and 411 aredescribed in detail below.

In FIG. 3, the dielectric film 75 arranged between the relay layer 71and capacitor line 300 as the capacitor electrodes, includes a siliconoxide film, such as a comparatively thin HTO film, LTO film or a siliconnitride film having a thickness of about 5 to 200 nm. From a viewpointof enlarging the storage capacitor 70, it is preferable that thedielectric film 75 has a smaller thickness, as long as the film has asufficient reliability.

As shown in FIG. 2 and FIG. 3, the pixel electrode 9 a is electricallyconnected to the high-density drain region 1 e in the semiconductorlayer 1 a via contact holes 83 and 85 by relaying the relay layer 71.When the relay layer 71 is used as a relay layer in this way, even if aninterlayer distance is long, for example, about 2000 mn, two or more ofseries contact holes having a comparatively small diameter can connectsatisfactorily between the two, while a technical difficulty inconnecting between the two using a single contact hole can be avoided,and thus the open area ratio of the pixel can be increased. In addition,this serves to reduce or prevent a punch-through by etching when thecontact hole is opened.

On the other hand, the data line 6 a is electrically connected to ahigh-density source region 1 d of the semiconductor layer 1 acomprising, for example, a polysilicon film via a contact hole 81. Thedata line 6 a can be relayed and connected to the high-density sourceregion 1 a by the relay layer.

The capacitor line 300 is provided extendedly from the image displayarea, in which the pixel electrode 9 a is arranged, to a circumferenceof the area, and connected electrically to a constant potential source,thereby set to be a fixed potential. Such constant potential source mayinclude a constant potential source as a positive power source ornegative power source which is supplied to a scan-line driving circuit(described below) to supply the scan line signal to the scan line 3 afor driving the TFT 30, or a data-line driving circuit (described below)to control a sampling circuit for supplying the image signal to the dataline 6 a, or a constant potential which is supplied to a counterelectrode 21 above a counter substrate 20. Further, the downside shadingfilm 11 a may be provided extendedly from the image display area to thecircumference of the area like the capacitor line 300 and connected tothe constant potential source in order to avoid a matter that apotential valuation of the film 11 a affects adversely on the TFT 30.

In FIG. 2 and FIG. 3, the electro-optical apparatus includes thetransparent TFT array substrate 10 and the transparent counter substrate20 arranged oppositely to the substrate 10. The TFT array substrate 10includes, for example, a quartz substrate, glass substrate, or siliconsubstrate, and the counter substrate 20 includes, for example, a glasssubstrate or quartz substrate.

As shown in FIG. 3, above the TFT array substrate 10, a pixel electrode9 a is provided, above which an orientation film 16, to which apredetermined orientation treatment such as the rubbing was performed,is provided. The pixel electrode 9 a comprises a transparent conductivefilm, such as ITO (Indium Tin Oxide) film. The orientation film 16includes an organic film such as a polyimide film.

On the other hand, above the counter substrate 20, the counter electrode21 is provided over the entire surface, and an orientation film 22, towhich a predetermined orientation treatment, such as the rubbing wasperformed, is provided on a downside of the substrate 20. The counterelectrode 21 comprises a transparent conductive film, such as the ITOfilm. The orientation film 22 comprises an organic film such as thepolyimide film.

Between such configured TFT array substrate 10 and counter substrate 20,where the pixel electrode 9 a and counter electrode 21 are arranged suchthat they are opposed to each other, the liquid crystal as one exampleof the electro-optical material is filled in a space enclosed by asealing material (described below), and thus a liquid crystal layer 50is formed. The liquid crystal layer 50 is oriented to a predetermineddirection by the orientation films 16 and 22 in a condition without anyelectric field applied from the pixel electrode 9 a. The liquid crystallayer 50 includes a liquid crystal mixture containing, for example, oneor several kinds of nematic liquid crystal. The sealing material is anadhesive including for example, a photo-curing resin or thermosettingresin, to bond the TFT array substrate 10 and counter substrate 20together with their edges, and contains a gap member, such as a glassfiber or glass beads mixed therein to keep a distance between the twosubstrates in a predetermined value.

Further, under the TFT 30 for switching the pixel, a foundationinsulating film 12 is provided. The foundation insulating film 12 has afunction of an interlayer isolation of the TFT 30 from the undersideshading film 11 a, in addition, when the film 12 is formed over theentire surface of the TFT array substrate 10, the film 12 has anotherfunction of reducing or preventing a change of the characteristic of theTFT 30 to switch the pixel due to a coarse surface-roughness of the TFTarray substrate 10 grown in polishing and a stain remained aftercleaning.

In FIG. 3, the TFT 30 to switch the pixel has a LDD (Lightly DopedDrain) structure, and has the scan line 3 a, the channel region 1 a′ ofthe semiconductor layer 1 a in which a channel is formed by the electricfield applied from the scan line 3 a, an insulating film 2 including agate insulating film to insulate the scan line 3 a from thesemiconductor layer 1 a, the low-density source region 1 b andlow-density drain region 1 c of the semiconductor layer 1 a, and thehigh-density source region 1 d and high-density drain region 1 e of thesemiconductor layer 1 a.

On the scan line 3 a, a first interlayer isolation film 41, in which acontact hole 81 communicating to the high-density source region 1 d anda contact hole 83 communicating to the high-density drain region 1 e areopened respectively, is formed.

On the first interlayer isolation film 41, the relay layer 71 andcapacitor line 300 are formed, on which a second interlayer isolationfilm 42, in which the contact hole 81 and a contact hole 85 are openedrespectively, is formed.

On the second interlayer isolation film 42, the data line 6 a is formed,on which a third interlayer isolation film 43, in which the contact hole85 communicating to the relay layer 71 is opened, is formed. The pixelelectrode 9 a is provided on a top surface of such configured thirdinterlayer isolation film 43.

Particularly in the exemplary embodiment, on the counter substrate 20, ashading film 23 as an example of the first shading film is formed in anisland pattern, in an area other than the opening area of each pixel.

As shown in FIG. 4, the shading film 23 has an overhanging portion 423overhanging such that the portion defines a corner cutting in theopening area of each pixel corresponding to the pixel electrode 9 a,substantially as the overhanging portion 401 in the capacitance line 300or the overhanging portion 403 in the downside shading film 11 a (referto FIG. 2), in the crossing area where the data line 6 a and scan line 3a cross with each other as viewed in a two-dimensional way. The channelregion 1′ is arranged within the crossing area.

By using the configuration, the shading film 23, together with thecapacitor line 300 and data line 6 a forming the upside shading film asabove, can securely block the injection of the incident light from thecounter substrate 20 side into the channel region 1 a′ and its adjacentregion.

A material for the shading film 23, like the capacitor line 300,includes a metal, alloy, metal silicide, polysilicide, or a stack ofthem, including at least one of high-melting point metals, such as Ti,Cr, W, Ta, and Mo. Any other metal, such as Al, Ag, Au, or Cu, may becontained. The film 23 may also have a multilayer structure in which,for example, a photo absorbing polysilicon film and a photo reflectivemetal film are stacked. In this case, from a viewpoint of reducing aninside reflection light, it is advantageous to arrange thephoto-absorbing polysilicon film on the downside (inside), and at thesame time, from a viewpoint of reducing or preventing a temperature risein the electro-optical apparatus, it is advantageous to arrange thelight-reflective metal film on the upside (outside). Alternatively, theshading film 23 may be formed of a colored resin.

Various modified exemplary embodiments according to the two-dimensionalpattern of the shading film 23 are described below with reference toFIG. 5 to FIG. 11.

According to the exemplary embodiment as described hereinbefore withreference to FIG. 1 to FIG. 4, the channel region 1 a′ and its adjacentregion (that is, the low-density source region 1 b and low-density drainregion 1 c shown in FIG. 2 and FIG. 3) are covered from the upside bythe shading film 23 formed on the counter substrate 20 as an example ofthe first shading film, as well as the capacitance line 300 and the dataline 6 a as the upside shading film formed on the TFT array substrate10. Therefore, shading against an incident light from a directionvertical to the TFT array substrate 10 can be enhanced by the shadingfilm 23, as well as the capacitance line 300 and the data line 6 a asthe upside shading film. On the other hand, the channel region 1 a′ andits adjacent region are covered from the downside by the downsideshading film 11 a. Therefore, shading against the return light such asthe back reflection light on the TFT array substrate 10, or the light,which is emitted from another electro-optical apparatus in amultiple-plate projector using plural number of electro-opticalapparatus as light valves and passes through a composite optical system,can be enhanced by the downside shading film 11 a.

The incident light contains an inclined light injected at oblique angleto the TFT array substrate 10. For example, an opticelement having anincident angle inclined about 10 to 15 degrees from the verticaldirection is contained about 10% in the incident light. Further, theinclined light is reflected on a top surface of the downside shadingfilm 11 a formed on the TFT array substrate 10, and thus an inclined,inside reflection light is generated in that electro-optical apparatus.The inclined, inside reflection light is further reflected on anotherinterface within the electro-optical apparatus, and thus an inclinedmultiple reflection light is generated. Particularly, the incident lightis extremely strong compared with the return light, and thus theinclined, inside reflection light and multiple reflection light based onthe incident light are also strong. In addition, the return light alsocontains the light injected at oblique angle, and the inside reflectionlight and multiple reflection light based on the return light are alsogenerated.

On the contrary, particularly in this embodiment, the shading film 23has an overhanging portion 423 defining the corner cutting in theopening area of each pixel in the crossing area (refer to FIG. 4).Further, the capacitor line 300 has the overhanging portion 401, and thedownside shading film 11 a has the overhanging portion 411 (refer toFIG. 2). The channel region 1 a′ is arranged in the center of thecrossing area, and separated from the opening area of each pixel throughwhich the incident light passes or the return light is injected withsome distance because of presence of the corner cutting. Therefore, theshading performance for the channel region 1 a′ and its adjacent regionis extremely improved by the presence of the overhanging portions 423,401, and 411. That is, compared with a case without the overhangingportions 423, 401, and 411, the strong incident light and return lightadvancing at oblique angle, and the inside reflection light and multiplereflection light arising from the light at oblique angle, areeffectively blocked to be injected to the channel region 1 a′ and itsadjacent region.

As a result, the unevenness of display or the flicker due to thelight-induced leakage current and variation in the TFT 30 can beefficiently reduced.

In addition, in the exemplary embodiment, the overhanging portions,which are symmetric vertically and horizontally, are provided in thefour corners of the opening area respectively, as shown in FIG. 4 andFIG. 2. Therefore, the two-dimensional pattern of the opening area ofeach pixel is close to a circle or polygon shape compared with the casewithout the overhanging portions 401 and others. Accordingly, awell-balanced shading in the four sides can be performed for the TFT 30,and an excellent image display having a reduced light escape region andmalfunctioned region can be performed in each opening area.

However, instead of providing the overhanging portions 423, 401, and 411in all of the four corners in this way, the overhanging portions 423,401, and 411 may be configured to be formed in one or plural number ofcorners, in which the bad orientation of the liquid crystal layer 50 iscomparatively large, among the four corners. For example, theoverhanging portions 423, 401, and 411 may be provided only in a cornerwhere the bad orientation of the liquid crystal layer 50 is mostsignificant in relation to the rubbing direction for the orientationfilms 16 and 22. Thus, by masking the bad orientation of the liquidcrystal layer 50 while restraining an excessive extension of theunopened area, the contrast ratio can be increased efficiently.

In the exemplary embodiment, although the capacitor line 300 has theoverhanging portion 401, and the downside shading film 11 a has theoverhanging portion 411, the overhanging portions can be omitted.Alternatively, either one of the overhanging portions may be provided.In each case, as long as the overhanging portion 423 exists in theshading film 23 above the counter substrate 20, the shading performancecan be improved compared with a case without any overhanging portionprovided.

On the other hand, according to the exemplary embodiment, since thestorage capacitor 70 is also incorporated in the shading area definingthe corner cutting, reduction of the opening area of each pixel can bereduced or efficiently avoided with the capacitance value beingincreased. Also, the drain electrode of the TFT 30 may be arranged inthe shading area defining the corner cutting so that the opening area ofeach pixel is not reduced.

According to the exemplary embodiment as described hereinbefore withreference to FIG. 1 to FIG. 4, the TFT 30 to switch the pixel having theexcellent transistor characteristic reduces the unevenness of displayand the flicker, and thus an electro-optical apparatus that can providea bright and high-definition or a high grade image display can berealized.

Although the downside shading film 11 a is dropped to the fixedpotential or set to a floating potential in the peripheral region in theexemplary embodiment described above, the downside shading film 11 a maybe connected to the capacitor line 300 within the image display area anddropped to the fixed potential. In this case, the downside shading film11 a can be functioned as a redundant interconnection for the capacitorline 300, and thus the resistance of the capacitor line 300 can bedesigned to be lowered. Alternatively, the downside shading film 11 a isconnected to the scan line 3 a along the scan line 3 a for one or pluralnumber of pixels, and the downside shading film 11 a may be formed in anapproximately striped pattern divided for each scan line 3 a. In thiscase, the downside shading film 11 a can be functioned as a redundantinterconnection for the scan line 3 a, and thus the resistance of thescan line 3 a can be designed to be lowered. In addition, the width ofthe shading area along the capacitor line 300 or scan line 3 a can benarrowed by using the downside shading film 11 a as the redundantinterconnection in this way.

In the exemplary embodiment described above, a level difference formedin an area along the data line 6 a and scan line 3 a on the foundationsurface of the pixel electrode 9 a may be planarized by grooving the TFTarray substrate 10, or by grooving the foundation insulating film 12,first interlayer isolation film 41, second interlayer isolation film 42,and third interlayer isolation film 43, and then burying theinterconnection such as the data line 6 a and the TFT 30 in the groove.Alternatively, that planarization may be done by polishing a leveldifference in the top surface of the third interlayer isolation film 43and the second interlayer isolation film 42 with CMP (ChemicalMechanical Polishing), or by forming the film flat with the organic SOG(Spin On Glass).

(Modified Exemplary Embodiments)

First, various modified exemplary embodiments of the two-dimensionalpattern of the shading film 23 above the counter substrate 20 usable inthe above exemplary embodiment are described with reference to FIG. 5 toFIG. 13. FIG. 5 to FIG. 11 are partial plan views showing modifiedexemplary embodiments according to the two-dimensional pattern of theshading film 23 at the counter substrate 20 side, which are usable inthe exemplary embodiment. FIG. 12 schematically shows a relationshipbetween the passage of the incident light and various shading filmsaccording to the exemplary embodiment of FIG. 4 and the modifiedexemplary embodiments of FIG. 5 to FIG. 7, and FIG. 13 schematicallyshows a relationship between the passage of the incident light andvarious shading films according to the modified exemplary embodiments ofFIG. 8 to FIG. 11. In FIG. 5 to FIG. 13, components equal to those shownin FIG. 1 to FIG. 4 are marked with equal reference symbols, anddescription of the components is omitted.

In the exemplary embodiment shown in FIG. 4 and the modified exemplaryembodiments of FIG. 5 to FIG. 7, the shading films 23 and 23 b to 23 dabove the counter substrate 20 are formed somewhat larger at leastpartially than the lattice-pattern upside shading film (that is, thecapacitor line 300 and data line 6 a defining the lattice-patternshading area) formed above the TFT array substrate 10, and configuredsuch that the films define the unopened area of each pixel at leastpartially. In each of the modified exemplary embodiments, a shading filmis provided as the overhanging portion 423 in a region opposed to theoverhanging portion 401.

That is, in the exemplary embodiment of FIG. 4, the shading film 23 isprovided in the island pattern above the counter substrate 20 only inthe crossing area within the shading area where the upside shading filmexists. Use of the shading film 23 can remarkably enhance the shadingperformance for the TFT 30 to switch the pixel in the vicinity of thecrossing area. In addition, the unopened area of each pixel can bedefined in the crossing area.

In the modified exemplary embodiment of FIG. 5, the shading film 23 b isprovided in an approximately lateral stripe pattern above the countersubstrate 20 only in the crossing area and a band region along the scanline 3 a within the shading area where the upside shading film exists.The use of the shading film 23 b can remarkably enhance the shadingperformance for the TFT 30 for switching the pixel in the vicinity ofthe crossing area and the region along the scan line 3 a. In addition,the unopened area of each pixel can be defined in the crossing area andthe band area along the scan line 3 a.

In the modified exemplary embodiment of FIG. 6, the shading film 23 c isprovided in an approximately longitudinal stripe pattern above thecounter substrate 20 only in the crossing area and a region along thedata line 6 a within the shading area where the upside shading filmexists. The use of the shading film 23 c can remarkably enhance theshading performance for the TFT 30 to switch the pixel in the vicinityof the crossing area and the region along the data line 6 a. Inaddition, the unopened area of each pixel can be defined in the crossingarea and the region along the data line 6 a.

In the modified exemplary embodiment of FIG. 7, the shading film 23 d isprovided in an approximate lattice pattern above the counter substrate20 in an area where the upside shading film exists. The use of theshading film 23 d can remarkably enhance the shading performance for theTFT 30 to switch the pixel in the entire unopened lattice-patternregion. In addition, the unopened area in that lattice pattern can bedefined.

As above, in the exemplary embodiment of FIG. 4 and the modifiedexemplary embodiments of FIG. 5 to FIG. 7, the shading films 23 and 23 bto 23 d above the counter substrate 20 defines the unopenedlattice-pattern area at least partially. On the contrary, in themodified exemplary embodiments of FIG. 8 to FIG. 11, shading films 23′and 23 b′ to 23 d′ above the counter substrate 20 are formed somewhatsmaller than such upside shading films, and configured such that thefilms do not define the unopened area. In each of the modified exemplaryembodiments, in the area opposed to the overhanging portion 401, ashading film is provided as an overhanging portion 423′ that is somewhatsmaller than the portion 401.

That is, in the modified exemplary embodiment of FIG. 8, the shadingfilm 23′ is provided in an island pattern above the counter substrate 20only in the crossing area within the shading area where the upsideshading film (that is, the capacitor line 300 and the data line 6 a)exists. The use of the shading film 23′ can remarkably enhance theshading performance for the TFT 30 to switch the pixel in the vicinityof the crossing area. Moreover, since the overhanging portion 423′ ofthe shading film 23′ is formed somewhat smaller than the overhangingportion 401, it is effectively reduced or avoided that the shading film23′ reduces the opening area due to a mechanical misalignment betweenthe TFT array substrate 10 and counter substrate 20 during production.

In the modified exemplary embodiment of FIG. 9, the shading film 23 b′is provided in the approximately lateral stripe pattern above thecounter substrate 20 only in the crossing area and the region along thescan line 3 a within the shading area where the upside shading filmexists. The use of the shading film 23 b′ can remarkably enhance theshading performance for the TFT 30 to switch the pixel in the vicinityof the crossing area and the region along the scan line 3 a. Moreover,since the shading film 23 b′ is formed somewhat smaller than theoverhanging portion 401 and capacitor line 300, it is reduced oreffectively avoided that the shading film 23 b′ reduces the opening areadue to the mechanical misalignment between the TFT array substrate 10and counter substrate 20 during production.

In the modified exemplary embodiment of FIG. 10, the shading film 23 c′is provided in the approximately longitudinal striped pattern above thecounter substrate 20 only in the crossing area and the region along thedata line 6 a within the shading area where the upside shading filmexists. The use of the shading film 23 c′ can remarkably enhance theshading performance for the TFT 30 for switching the pixel in thevicinity of the crossing area and the region along the data line 6 a.Moreover, since the shading film 23 c′ is formed somewhat smaller thanthe overhanging portion 401 and data line 6 a, it is effectively avoidedthat the shading film 23 c′ reduces the opening area due to themechanical misalignment between the TFT array substrate 10 and countersubstrate 20 during production.

In the modified exemplary embodiment of FIG. 11, the shading film 23 d′is provided in an approximately lattice pattern above the countersubstrate 20 in the area where the upside shading film exists. The useof the shading film 23 d′ can remarkably enhance the shading performancefor the TFT 30 to switch the pixel in all of the unopenedlattice-pattern area. Moreover, since the shading film 23 d′ is formedsomewhat smaller than the overhanging portion 401, as well as thecapacitor line 300 and data line 6 a, it is effectively reduced oravoided that the shading film 23 d′ reduces the opening area due to themechanical misalignment between the TFT array substrate 10 and countersubstrate 20 during production.

Here, as shown in FIG. 12, in the cases of the exemplary embodiment ofFIG. 4 and the modified exemplary embodiments of FIG. 5 to FIG. 7, theshading film above the counter substrate 20 (that is, the shading films23 and 23 b to 23 d) is somewhat larger than the shading film above theTFT array substrate 10 (that is, the capacitance line 300 and data line6 a, as well as downside shading film 11 a). Thus, the shading for theTFT 30 against a vertically incident light L1 and obliquely incidentlight L2 can be substantially achieved by the shading film above thecounter substrate 20. The return light L3 can be also shaded by thedownside shading film 11 a. In addition, even if some misalignmentoccurs between the two substrates, as viewed in a two-dimensional way,the shading film above the TFT array substrate 10 is not likely toprotrude from the shading film above the counter substrate 20 and reducethe opening area of each pixel.

On the other hand, as shown in FIG. 13, in the cases of the modifiedexemplary embodiments of FIG. 8 to FIG. 11, the shading film above thecounter substrate 20 (that is, the shading films 23′ and 23 b′ to 23 d′)is somewhat smaller than the shading film above the TFT array substrate10 (that is, the capacitor line 300 and data line 6 a, as well as thedownside shading film 11 a). Thus, the shading for the TFT 30 againstthe vertically incident light L1 and obliquely incident light L2 isachieved by the shading film above the counter substrate 20 and theshading film above the TFT array substrate 10. In addition, even if somemisalignment exists between the two substrates, as viewed in atwo-dimensional way, the shading film above the counter substrate 20 isnot likely to protrude from the shading film above the TFT arraysubstrate 10 and reduce the opening area of each pixel.

As described above with reference to FIG. 4 to FIG. 13, in the exemplaryembodiments, various figures of the overhanging portions of thecapacitor line 300, relay layer 402, and downside shading film 11 a, andthe corner cutting of the pixel electrode 9 a can be used, and variousdifferent combinations of them are possible. Which combination to beused is given from the most preferable combination determinedexperimentally or experientially in view of a practical specification ofthe apparatus, and then the combination is preferably used.

Next, a modified exemplary embodiment using a micro-lens is describedwith reference to FIGS. 14(a)-15(b). FIG. 14(a) is a partially enlargedplan view showing a micro-lens incorporated in the counter substrate 20,and FIG. 14(b) is a cross-sectional view taken along plane E-E′ of FIG.14(a). FIG. 15(a) is a partially enlarged plan view showing arelationship between the micro-lens of FIGS. 14(a) and 14(b) and theshading film 23 (refer to FIG. 4), and FIG. 15(b) is a cross-sectionalview taken along plane E-E′ of FIG. 15(a).

The modified exemplary embodiment is an exemplary embodiment where themicro-lens is incorporated within the counter substrate 20, such thatthe micro-lens corresponds one to one to each pixel, or the micro-lensis mounted on the top or bottom surface of the substrate 20 togetherwith a cover glass, such that the micro-lens corresponds one to one toeach pixel.

As shown in FIGS. 14(a) and 14(b), the micro-lens 501 is a small convexlens for converging light with the center of each pixel as a lenscenter. Therefore, in a vicinity of the center of the micro-lens 501having a surface height shown by a contour in FIG. 14(a), the incidentlight L1 can be appropriately converged as shown in FIG. 14(b). On theother hand, in the gap region 501 (shown as a hatching area in thefigure) of the micro-lens 501 adjacent vertically and horizontally witheach other as shown in FIG. 14(a), according to the property of thelens, it is hard or impossible to converge the incident lightappropriately. Thus, as shown in FIG. 14(b), the light cannot beconverged appropriately and a stray light L4 is generated.

However, as shown in FIG. 15(a), in the exemplary embodiment, the gapregion 502 is masked by the shading film 23 having the overhangingportion 423. Thus, as shown in FIG. 15(b), it is possible to reduce orprevent most of the stray light L4 mixing in the incident light L1. Atthat time, since the micro-lens 501 converges the incident light L1 inthe opening area of each pixel in an approximately circular pattern, itis advantageous that the overhanging portion 423 is formed in the fourcorners of the opening area of each pixel to make the opening area ofeach pixel to be close to a circle.

As described with reference to FIGS. 14(a)-15(b), according to theexemplary embodiment, still brighter image display can be achieved byenhancing the usability efficiency of light using the micro-lens 501. Atthe same time, the problem due to the gap region 502, in which the lenscharacteristic of the micro-lens 501 is inferior, can be solved by theshading film 23 having the overhanging portion 423, therefore, anextremely high-grade image display can be eventually achieved.

As described above, the overhanging portion of the shading film providedabove the counter substrate has a shading area to shade the cornerportion of the pixel electrode. The overhanging portion of the shadingfilm provided above the counter substrate covers another shading film inthe crossing area of the scan line and data line, or is formed smallerthan the another shading film in the crossing area.

(General Configuration of Electro-Optical Apparatus)

A general configuration of the electro-optical apparatus in eachexemplary embodiment configured as above is described with reference toFIG. 16 and FIG. 17. FIG. 16 is a plan view of the TFT array substrate10 together with respective components formed thereon, as viewed fromthe counter substrate 20 side, and FIG. 17 is a cross-sectional viewtaken along plane H-H′ of FIG. 16.

In FIG. 16, on the TFT array substrate 10, a sealing member 52 isprovided along edges of the substrate, and a shading film 53 is providedas a frame defining a circumference of an image display area 10 a, inparallel to the inside of the sealing member. In an area outside of thesealing member 52, a data-line driving circuit 101 to drive the dataline 6 a by supplying the image signal to the data line 6 a at apredetermined timing and a connection terminal 102 for outer circuit areprovided along one side of the TFT array substrate 10, and a scan-linedriving circuit 104 to drive the scan line 3 a by supplying the scansignal to the scan line 3 a in a predetermined timing is provided alongtwo sides adjacent to the one side. When delay of the scan signalsupplied to the scan line 3 a, is not a problem, the scan-line drivingcircuit 104 may be provided only at one side. In addition, the data-linedriving circuit 101 may be arranged in both sides along the sides of theimage display area 10 a. Further, on the remained one side of the TFTarray substrate 10, plural number of interconnections 105 for connectingbetween the scan-line driving circuits 104 provided on both sides of theimage display area 10 a are provided. In at least one of the cornerportions of the counter substrate 20, a conduction member 106 isprovided for electrically connecting between the TFT array substrate 10and counter substrate 20. As shown in FIG. 17, the counter substrate 20having an approximately same profile as that of the sealing member 52shown in FIG. 16 is bound to the TFT array substrate 10 by that sealingmember 52.

Above the TFT array substrate 10, in addition to the data-line drivingcircuit 101 and scan-line driving circuit 104, a sampling circuit toapply the image signal to the plural number of data lines 6 a at apredetermined timing, a pre-charge circuit to supply a pre-charge signalat a predetermined voltage level prior to the image signal to the pluralnumber of data lines 6 a respectively, and an inspection circuit toperform a quality or defect inspection for that electro-opticalapparatus during production or before shipping, may be formed.

In the exemplary embodiments described above with reference to FIG. 1 toFIG. 17, instead of providing the data-line driving circuit 101 andscan-line driving circuit 104 above the TFT array substrate 10, thecircuits may be connected electrically and mechanically to a driver LSImounted on TAB (Tape Automated bonding) substrate via an anisotropicconductive film provided on a periphery of the TFT array substrate 10.On a side of the counter substrate 20 to which a projection light isinjected, and on a side of the TFT array substrate 10 from which anemission light is emitted, a polarizing film, a retardation film, and apolarizing plate are arranged in a predetermined direction depending onan operation mode such as TN (Twisted Nematic) mode, STN (Super TwistedNematic) mode, VA (Vertically Aligned) mode, or PDLC (Polymer DispersedLiquid Crystal) mode, or according to whether the mode is the normallywhite mode or the normally black mode.

The electro-optical apparatus in the exemplary embodiments describedabove is used for the projector, therefore three electro-opticalapparatus are used for the light valves for RGB respectively, and eachcolor of light separated through a dichroic mirror for RGB colorseparation is injected to each light valve as the projection light.Therefore, in each exemplary embodiment, a color filter is not providedabove the counter substrate 20. However, an RGB color filter may beformed above the counter substrate 20 in a predetermined area opposed tothe pixel electrode 9 a together with a protection film of the filter.This enables application of the electro-optical apparatus in eachexemplary embodiment to a direct viewing type or reflection type ofcolor electro-optical apparatus other than a projector. Alternatively, acolor filter layer may be formed with a color resist under the pixelelectrode 9 a opposing to RGB above the TFT array substrate 10. Thisenables realization of a bright electro-optical apparatus by enhancing aconvergence efficiency of the incident light.

Still further, by depositing multiple layers of interference layerincluding layers having a different refractive index above the countersubstrate 20, a dichroic filter which produces the RGB colors using theinterference of light may be formed. The counter substrate with thedichroic filter can realize a brighter color electro-optical apparatus.

(Exemplary Embodiment of Electronic Equipment)

Next, regarding an exemplary embodiment of a projection type of colordisplay apparatus as an example of the electronic equipment using theelectro-optical apparatus described above in detail as the light valve,a general configuration of it, particularly an optical configuration isdescribed. Here, FIG. 18 is a schematic cross-sectional view of theprojection type of color display apparatus.

In FIG. 18, a liquid crystal projector 1100 as an example of projectioncolor display apparatus in this exemplary embodiment is configured as aprojector, in which three liquid-crystal modules including a liquidcrystal apparatus 100 having a driving circuit mounted on the TFT arraysubstrate are prepared and used as light valves 100R, 100G, and 100B forRGB, respectively. In the liquid crystal projector 1100, when aprojection light is emitted from a lamp unit 1102 of white-light sourcesuch as a metal halide lamp, the light is divided into optic elements R,G, B corresponding to the three primary colors of RGB by three mirrors1106 and two dichroic mirrors 1108, and respective optic elements areintroduced to the light valves 100R, 100G, and 100B corresponding torespective colors. Particularly at that time, the light B is introducedthrough a relay lens system 1121 including an incident lens 1122, arelay lens 1123 and emission lens 1124 in order to reduce or prevent alight loss due to a long optical path. The optic elements correspondingto the three primary colors modulated by the light valves 100R, 100G,and 100B respectively are synthesized again by a dichroic prism 1112,then projected on a screen 1120 through a projection lens 1114 as acolor image.

The invention is not limited to the above exemplary embodiments, and canbe altered properly without departing from the claims and the scope oridea of the invention read out generally from the specification, and inaddition, the electro-optical apparatus and electronic equipmentaccompanied with such alteration are also included within the technicalscope of the invention.

1. An electro-optical apparatus, comprising: a pair of first and secondsubstrates; an electro-optical material sandwiched between the pair offirst and second substrates; a pixel electrode formed above the firstsubstrate; a thin film transistor to switch and control the pixelelectrode; a data line to supply an image signal to the thin filmtransistor; a scan line which supplies a scan signal to the thin filmtransistor and crosses with the data line; and a first shading filmcovering at least a channel region of a semiconductor layer forming thethin film transistor from an upside, the first shading film being formedabove the second substrate, the first shading film having an overhangingportion overhanging such that the portion defines a corner cutting in anopening area of each pixel corresponding to the pixel electrode in acrossing area where the data line and the scan line cross with eachother as viewed two-dimensionally, the channel region being arrangedwithin the crossing area.
 2. The electro-optical apparatus according toclaim 1, the channel region being arranged in a center of the crossingarea.
 3. The electro-optical apparatus according to claim 1, furtherincluding a micro-lens arranged oppositely to the pixel electrode abovethe second substrate, the first shading film being formed in the areaopposed to the crossing area.
 4. The electro-optical apparatus accordingto claim 1, the first shading film being formed in an island patternindividually in the crossing area.
 5. The electro-optical apparatusaccording to claim 1, the first shading film being formed in a stripedpattern region extending along the scan line or the data line includingthe crossing area.
 6. The electro-optical apparatus according to claim1, the first shading film being formed in a lattice pattern regionextending along the scan line and the data line including the crossingarea.
 7. The electro-optical apparatus according to claim 1, furtherincluding an upside shading film covering at least the channel regionfrom an upside, the upside shading film being provided above the firstsubstrate.
 8. The electro-optical apparatus according to claim 7, theupside shading film having the overhanging portion overhanging such thatthe portion defines the corner cutting in the crossing area.
 9. Theelectro-optical apparatus according to claim 7, a two-dimensionalpattern of the first shading film covering a two-dimensional pattern ofthe upside shading film in the crossing area.
 10. The electro-opticalapparatus according to claim 7, the two-dimensional pattern of the firstshading film being formed within the two-dimensional pattern of theupside shading film in the crossing area.
 11. The electro-opticalapparatus according to claim 1, further including a downside shadingfilm covering at least the channel region from a downside, the downsideshading film being provided above the first substrate.
 12. Theelectro-optical apparatus according to claim 11, the downside shadingfilm having an overhanging portion overhanging such that the portiondefines the corner cutting in the crossing area.
 13. The electro-opticalapparatus according to claim 1, the overhanging portion being providedat least in one or plural number of corners where malfunction of theelectro-optical material is comparatively serious among four corners ofthe opening area.
 14. The electro-optical apparatus according to claim1, further including overhanging portions, which are symmetricvertically and horizontally, provided in four corners of the openingarea respectively.
 15. An electro-optical apparatus, comprising: a pairof first and second substrates; an electro-optical material sandwichedbetween the pair of first and second substrates; a pixel electrodeformed above the first substrate; a thin film transistor to switch andcontrol the pixel electrode; a data line to supply an image signal tothe thin film transistor; a scan line which supplies a scan signal tothe thin film transistor, and crosses with the data line above the firstsubstrate; and a first shading film covering at least a channel regionof a semiconductor layer forming the thin film transistor from anupside, the first shading film being formed above the second substrate,the first shading film having a shading region to shade the corner ofthe pixel electrode in the crossing area where the data line and thescan line cross with each other as viewed two-dimensionally, the channelregion being arranged within the crossing area.
 16. An electronicequipment, comprising: a pair of first and second substrates; anelectro-optical material sandwiched between the pair of first and secondsubstrates; a pixel electrode formed above the first substrate; a thinfilm transistor to switch and control the pixel electrode; a data lineto supply an image signal to the thin film transistor; a scan line whichsupplies a scan signal to the thin film transistor and crosses with thedata line above the first substrate; and a first shading film coveringat least a channel region of a semiconductor layer forming the thin filmtransistor from an upside, the first shading film being formed above thesecond substrate, the first shading film having an overhanging portionoverhanging such that the portion defines a corner cutting in theopening area of each pixel corresponding to the pixel electrode in thecrossing area where the data line and the scan line cross with eachother as viewed two-dimensionally, the channel region being arrangedwithin the crossing area.